2020/01/09 by Tímea Nóra Török, Miklós Csontos, Péter Makk +1 · 10 citations
Engineering · Neuroscience · Physics and Astronomy · #Advanced Memory and Neural Computing #Andreev reflection #Atomic units #Computer science #Condensed matter physics #Conductance #Ferroelectric and Negative Capacitance Devices #Materials science #Memristor #Nanoscopic scale #Nanotechnology #Neuromorphic engineering #Photoreceptor and optogenetics research #Physics #Protein filament #Quantum #Quantum dot #Quantum mechanics #Resistive touchscreen #Thermal conduction #cond-mat.mes-hall #cond-mat.supr-con
paper · pdf · open access · doi:10.1021/acs.nanolett.9b04617
published in Nano Letters 20(2), 1192-1200 (American Chemical Society)
openalex publication_date 2020/01/09 · arxiv created 2020/07/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05 · arxiv updated 2026/08/06
High Resolution Image Download MS PowerPoint Slide Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross section on the device conductance, a nanometer-scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamental requirements of neuromorphic computing hardware. However, device engineering lacks the complete quantum characterization of such filamentary conductance. Here we analyze multiple Andreev reflection processes emerging at the filament terminals when superconducting electrodes are utilized. Thereby, the quantum PIN code, i.e., the transmission probabilities of each individual conduction channel contributing to the conductance of the nanojunctions, is revealed. Our measurements on Nb 2 O 5 resistive switching junctions provide profound experimental evidence that the onset of the high conductance ON state is manifested via the formation of truly atomic-sized metallic filaments.