Fabrication and characterization of an induced GaAs single hole transistor

2010/02/16 by O. Klochan, J.C.H. Chen, J. C. H. Chen +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Characterization (materials science) #Condensed matter physics #Conductance #Coulomb blockade #Doping #Electrical engineering #Engineering #Fabrication #Field-effect transistor #Heterojunction #High-electron-mobility transistor #Materials science #Modulation (music) #Nanotechnology #Noise (video) #Optoelectronics #Physics #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Silicon #Transistor #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.3336011

accepted for publication in Applied Physics Letters

arxiv created 2010/02/16 · openalex publication_date 2010/03/01 · arxiv updated 2015/05/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and an order of magnitude better than in silicon SETs.

Citations

• Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique
• Radio-frequency reflectometry on large gated two-dimensional systems
• Observation of excited states in a p-type GaAs quantum dot
• Large variations in the hole spin splitting of quantum-wire subband edges
• Single-shot read-out of an individual electron spin in a quantum dot