2008/09/08 by Y. Komijani, M. Csontos, T. Ihn +3
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1209/0295-5075/84/57004
published as Europhys. Lett. 84, 57004 (2008) · 5 pages, 5 figures
arxiv created 2008/09/08 · openalex publication_date 2008/11/26 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low-temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at T hole =185 mK. The charging energies as large as ∼2 meV evaluated from Coulomb diamond measurements together with the well-resolved single-hole excited-state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.