Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

2000/06/01 by Toshimasa Fujisawa, Yoshiro Hirayama · 3 citations
Physics and Astronomy · #Mechanical and Optical Resonators #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.127038

4 pages, 4 figures, to be published in Appl. Phys. Lett

arxiv created 2000/06/01 · openalex publication_date 2000/07/24 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Radio-frequency (rf)-operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current (∼0.1 pA).

Citations

• Coherent control of macroscopic quantum states in a single-Cooper-pair box
• Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctions

Cited by

• Dephasing of Coupled Spin Qubit System during Gate Operations Due to Background Charge Fluctuations
• High-fidelity one-qubit operations under random telegraph noise
• Observing sub-microsecond telegraph noise with the radio frequency single electron transistor