2004/09/22 by T. M. Buehler, D. J. Reilly, R. P. Starrett +8
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Radio Frequency Integrated Circuit Design #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.1813619
Accepted for publication in Journal of Applied Physics. Comments always welcome, email [email protected], [email protected]
arxiv created 2004/09/22 · openalex publication_date 2004/11/22 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Telegraph noise, which originates from the switching of charge between metastable trapping sites, becomes increasingly important as device sizes approach the nanoscale. For charge-based quantum computing, this noise may lead to decoherence and loss of readout fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe microsecond telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.