2010/01/05 by M. J. Rozenberg, M. J. Sanchez, M. J. Sánchez +6 · 3 citations
Chemistry · Engineering · Neuroscience · Physics and Astronomy · #Advanced Memory and Neural Computing #Chemistry #Ferroelectric and Negative Capacitance Devices #Materials science #Mechanism (biology) #Neuroscience and Neural Engineering #Optoelectronics #Organic chemistry #Physics #Transition metal #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.81.115101
Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figures
arxiv created 2010/01/05 · openalex publication_date 2010/03/01 · arxiv updated 2015/05/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We introduce a model that accounts for the bipolar resistive switching phenomenon observed in transition-metal oxides. It qualitatively describes the electric-field-enhanced migration of oxygen vacancies at the nanoscale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces leading to spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce nontrivial resistance hysteresis experiments that we also report providing key validation to our model.