2014/11/26 by Bin Cui, Cheng Song, Gillian A. Gehring +7 · 1 citation
Materials Science · Physics and Astronomy · #Anisotropy #Electric field #Electronic and Structural Properties of Oxides #Magnetic and transport properties of perovskites and related materials #Magnetic anisotropy #Magnetic field #Multiferroics and related materials #Occupancy #Voltage #cond-mat.mtrl-sci
paper · pdf · doi:10.1002/adfm.201403370
19 pages, 4 figures. Accepted by Adv. Funct. Mater
arxiv created 2014/11/26 · arxiv updated 2014/11/27 · openalex publication_date 2014/12/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Electrical manipulation of lattice, charge, and spin is realized respectively by the piezoelectric effect, field‐effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental research and industrial production. However, it is generally accepted that the orbital of materials are impossible to be altered once they have been made. Here, electric field is used to dynamically tune the electronic‐phase transition in (La,Sr)MnO 3 films with different Mn 4+ /(Mn 3+ + Mn 4+ ) ratios. The orbital occupancy and corresponding magnetic anisotropy of these thin films are manipulated by gate voltage in a reversible and quantitative manner. Positive gate voltage increases the proportion of occupancy of the orbital and magnetic anisotropy that were initially favored by strain (irrespective of tensile and compressive), while negative gate voltage reduces the concomitant preferential orbital occupancy and magnetic anisotropy. Besides its fundamental significance in orbital physics, these findings might advance the process towards practical oxide‐electronics based on orbital.