2012/06/13 by Marcus Wu Shihong, Shihong, Marcus Wu, Themis Prodromakis +5
Engineering · #Advanced Memory and Neural Computing #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1206.2746
openalex publication_date 2012/06/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory elements. Identifying the vital physical mechanisms behind resistive switching can enable these devices to be utilized more efficiently, reliably and in the long-term. In this paper, we present a new approach for analysing resistive switching by modelling the active core of two terminal devices as 2D and 3D grid circuit breaker networks. This model is employed to demonstrate that substantial resistive switching can only be supported by the formation of continuous current percolation channels, while multi-state capacity is ascribed to the establishment and annihilation of multiple channels.