2011/12/12 by Susan Meñez Aspera, Aspera, Susan Meñez, Hideaki Kasai +9
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1112.2500
22 pages, 5 figures, 2 tables
arxiv created 2011/12/12 · openalex publication_date 2011/12/12 · arxiv updated 2011/12/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching based on oxygen vacancy migration-driven change in electronic properties of the transition metal oxide (TMO) film stimulated by set pulse voltages. We used density functional theory (DFT)-based calculations to account for the effect of oxygen vacancy and its migration on the electronic properties of HfO2 and Ta/HfO2 systems, and thereby create the entire story on RRAMTM's switching mechanism. Computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the results of set and reset pulse voltage obtained from experiment. Understanding of this mechanism would be beneficial to effectively realize materials design in these devices.