2013/02/01 by Masaki Kobayashi, Iriya Muneta, Yukiharu Takeda +11
Chemistry · Materials Science · Physics and Astronomy · #Anderson impurity model #Band gap #Chemistry #Condensed matter physics #Doping #Electronic band structure #Ferromagnetism #Ga2O3 and related materials #Impurity #Magnetic and transport properties of perovskites and related materials #Magnetic semiconductor #Materials science #Optoelectronics #Physics #Semiconductor #Semimetal #Valence (chemistry) #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.89.205204
published as Phys. Rev. B 89, 205204 (2014) · 5 pages, 3 figures
arxiv created 2013/02/01 · openalex publication_date 2014/05/19 · arxiv updated 2014/08/19 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
(Ga,Mn)As is a paradigm of a diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerging from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this article, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band (IB) in (Ga,Mn)As. The band appears dispersionless and hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence-band structure of (Ga,Mn)As disputed for more than a decade. The nondispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived IB is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism is predominantly the transport of hole carriers in the IB.