Mn Interstitial Diffusion in(Ga,Mn)As

2003/07/07 by K. W. Edmonds, P. Bogusławski, P. Boguslawski +12 · 5 citations
Materials Science · Physics and Astronomy · #Copper-based nanomaterials and applications #Electronic and Structural Properties of Oxides #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.92.037201

published as Physical Review Letters 92, 037201 (2004) · 5 pages, 4 figures, submitted to Physical Review Letters

arxiv created 2003/07/07 · openalex publication_date 2004/01/20 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements during annealing show that the observed changes are due to out diffusion of Mn interstitials towards the surface, governed by an energy barrier of 0.7-0.8 eV. Electric fields induced by Mn acceptors have a significant effect on the diffusion.

Citations

• Effects of annealing time on defect-controlled ferromagnetism in Ga1−xMnxAs
• Capping-induced suppression of annealing effects on Ga1−xMnxAs epilayers
• Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

Cited by

• High Temperature Ferromagnetism in GaAs-Based Heterostructures with MnδDoping
• Adsorption, segregation, and magnetization of a single Mn adatom on the GaAs(110) surface
• Disorder, spin-orbit, and interaction effects in diluteGa1−xMnxAs
• Weak Localization in Ferromagnetic (Ga,Mn)As Nanostructures
• Unified picture for diluted magnetic semiconductors