2001/05/28 by S. J. Potashnik, K. C. Ku, Seung‐Hyun Chun +6 · 12 citations
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Magnetic and transport properties of perovskites and related materials #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1398619
published as Appl. Phys. Lett. 79, 1495 (2001) · 14 pages, pdf only, submitted to Applied Physics Letters
arxiv created 2001/05/28 · openalex publication_date 2001/09/03 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1−xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 °C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1−xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.