2003/07/18 by I. Kuryliszyn-Kudelska, I. Kuryliszyn‐Kudelska, J. Z. Domagała +8
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Magnetic and transport properties of perovskites and related materials #ZnO doping and properties #cond-mat
paper · pdf · doi:10.1063/1.1634390
26 pages
arxiv created 2003/07/18 · openalex publication_date 2003/12/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Structural investigation of as-grown as well as annealed Ga1−xMnxAs epilayers was carried out using high-resolution x-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027⩽x⩽0.083), with special attention on how the interstitial Mn atoms (MnI) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low-temperature annealing of Ga1−xMnxAs, which is known to reduce the MnI concentration. The reciprocal space maps measured for all of the investigated samples showed that the Ga1−xMnxAs layers are fully strained—i.e., they remain pseudomorphic to the GaAs (001) substrate—for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied, the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga1−xMnxAs epilayers.