Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

2002/10/19 by K. C. Ku, S. J. Potashnik, Ruifang Wang +15 · 12 citations
Materials Science · Physics and Astronomy · #Magnetic and transport properties of perovskites and related materials #Physics of Superconductivity and Magnetism #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.1564285

published as Appl. Phys. Lett. 82, 2302 (2003) · pdf file only

arxiv created 2002/10/19 · openalex publication_date 2003/04/03 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We report Curie temperatures up to 150 K in annealed Ga1−xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) suggest that the higher Curie temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material, suggesting that the free surface of Ga1−xMnxAs epilayers may be important in determining their physical properties.

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