2003/11/23 by P. M. Krstajić, P. M. Krstajic, F. M. Peeters +4
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Magnetic and transport properties of perovskites and related materials #ZnO doping and properties #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.70.195215
published as Physical Review B 70, 195215 (2004) · Submitted to PRB
arxiv created 2003/11/23 · openalex publication_date 2004/11/01 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
A microscopic model of indirect exchange interaction between transition metal impurities in dilute magnetic semiconductors (DMS) is proposed. The hybridization of the impurity d-electrons with the heavy hole band states is mainly responsible for the exchange of electrons between the impurities, whereas the Hund rule for the electron occupation of the impurity d-shells makes it spin selective. The model is applied to such systems as n-type (Ga,Mn)N and p-type (Ga,Mn)As, p-type (Ga,Mn)P. In n-type DMS with Mn2+∕3+ impurities the exchange mechanism is rather close to the kinematic exchange proposed by Zener for mixed-valence Mn ions. In p-type DMS ferromagnetism is governed by the kinematic mechanism involving the kinetic energy gain of the heavy hole carriers caused by their hybridization with 3d electrons of Mn2+ impurities. Using the molecular field approximation, the Curie temperatures TC are calculated for several systems as functions of the impurity and hole concentrations. Comparison with the available experimental data shows a good agreement.