2001/12/31 by H. Asklund, H. Åsklund, L. Ilver +3 · 4 citations
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Magnetic and transport properties of perovskites and related materials #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.66.115319
published as Phys. Rev. B 66, 115319 (2002) · REVTeX style; 7 pages, 3 figures
arxiv created 2002/09/08 · openalex publication_date 2002/09/24 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinning in Ga_1\ensuremath-xMnxAs with Mn concentrations in the range 1%--6%. We find that the Mn-induced changes in the valence-band spectra depend strongly on the Mn concentration, suggesting that the interaction between the Mn ions is more complex than assumed in earlier studies. The relative position of the Fermi level is also found to be concentration dependent. In particular we find that for concentrations around 3.5%--5% it is located very close to the valence-band maximum, which is in the range where metallic conductivity has been reported in earlier studies. For concentrations outside this range, larger as well as smaller, the Fermi level is found to be pinned at about 0.15 eV higher energy.