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High Temperature Ferromagnetism in GaAs-Based Heterostructures with MnδDoping

2005/03/17 by A. M. Nazmul, T. Amemiya, Tomohiro Amemiya +5 · 1 citation
Materials Science · Physics and Astronomy · #Magnetic and transport properties of perovskites and related materials #Physics of Superconductivity and Magnetism #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.95.017201

18 pages, 4 figures

arxiv created 2005/03/17 · openalex publication_date 2005/06/28 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We show that suitably designed magnetic semiconductor heterostructures consisting of Mn delta (delta)-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the two-dimensional hole gas wave function, realized remarkably high ferromagnetic transition temperatures (T(C)). A significant reduction of compensative Mn interstitials by varying the growth sequence of the structures followed by low-temperature annealing led to high T(C) up to 250 K. The heterostructure with high T(C) exhibited peculiar anomalous Hall effect behavior, whose sign depends on temperature.

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