2011/08/26 by B. C. Chapler, Roberto C. Myers, R. C. Myers +14 · 2 citations
Chemistry · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Band gap #Chemistry #Condensed matter physics #Doping #Electronic and Structural Properties of Oxides #Impurity #Infrared #Magnetic and transport properties of perovskites and related materials #Materials science #Metal #Metallurgy #Metal–insulator transition #Optics #Physics #Valence (chemistry) #Valence band #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.84.081203
published as B. C. Chapler, R. C. Myers, S. Mack, A. Frenzel, B. C. Pursley, K. S. Burch, E. J. Singley, A. M. Dattelbaum, N. Samarth, D. D. Awschalom, and D. N. Basov, Phys. Rev. B 84, 081203(R) (2011)
openalex publication_date 2011/08/26 · arxiv created 2011/09/01 · arxiv updated 2011/09/05 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga_1\ensuremath-xMnxAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.