2014/03/13 by Hua-Hua Fu, Hua‐Hua Fu, Jing-Tao Lü +2
Materials Science · Physics and Astronomy · #Computer science #Condensed matter physics #Coupling (piping) #Doping #Electron #Enhanced Data Rates for GSM Evolution #Graphene research and applications #Insulator (electricity) #Materials science #Optoelectronics #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Spin (aerodynamics) #Telecommunications #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.89.205431
published as Phys. Rev. B 89, 205431 (2014) · 5 pages, 4 figures
arxiv created 2014/03/13 · openalex publication_date 2014/05/27 · arxiv updated 2014/06/11 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We theoretically investigate the finite size effect in quantum anomalous Hall (QAH) system. Using Mn-doped HgTe quantum well as an example, we demonstrate that the coupling between the edge states is spin dependent and is related not only to the distance between the edges but also to the doping concentration. Thus with proper tuning of the two, we can get four kinds of transport regimes: quantum spin Hall, QAH, edge conducting, and normal insulator. These transport regimes have distinguishing edge conducting properties while the bulk is insulting. Our results give a general picture of the finite size effect in a QAH system, and are important for the transport experiments in QAH nanomaterials as well as future device applications.