Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: Anab-initiostudy

2011/08/31 by Jun Ding, Zhenhua Qiao, Wanxiang Feng +2 · 10 citations
Chemistry · Materials Science · Physics and Astronomy · #Ab initio #Atom (system on chip) #Chemistry #Condensed matter physics #Coupling (piping) #Dirac (video compression format) #Graphene #Graphene research and applications #Magnetic field #Materials science #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum anomalous Hall effect #Quantum mechanics #Spin (aerodynamics) #Supercell #Topological Materials and Phenomena #Transition metal #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.84.195444

published as Phys. Rev. B 84, 195444 (2011) · Submitted to PRL on Aug. 10, 2011. 11 pages(4.5 pages for the main text and 6.5 pages for the supporting materials)

arxiv created 2011/08/31 · openalex publication_date 2011/11/15 · arxiv updated 2011/11/16 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3d transition and noble-metal atoms using first-principles calculation methods. We find that most transition-metal atoms (i.e., Sc, Ti, V, Mn, Fe) favor the hollow adsorption site, and the interaction between magnetic adatoms and the \ensuremathπ orbital of graphene induces sizable exchange-field and Rashba spin-orbit coupling, which together open a nontrivial bulk gap near the Dirac K/K^\ensuremath'(\ensuremathΓ) points in the 4\ifmmode×\else\texttimes\fi4 (3\ifmmode×\else\texttimes\fi3) supercell of graphene leading to the quantum anomalous Hall effect. We also find that the noble-metal atoms (i.e., Cu, Ag, Au) prefer the top adsorption site, and the dominant inequality of the AB sublattice potential opens another kind of nontrivial bulk gap exhibiting the quantum-valley Hall effect in the 4\ifmmode×\else\texttimes\fi4 supercell of graphene.

Citations

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• Valley-polarized quantum anomalous Hall phases and tunable topological phase transitions in half-hydrogenated Bi honeycomb monolayers
• Electronic properties of graphene-based bilayer systems
• Segregation growth and self-organization of ordered S atomic superlattices confined at interface between graphene and substrates