2010/10/04 by Jun Yan, Michael S. Fuhrer
Chemistry · Materials Science · Physics and Astronomy · #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Conductance #Electric field #Electrical resistance and conductance #Enhanced Data Rates for GSM Evolution #Graphene #Graphene research and applications #Materials science #Membrane #Nanotechnology #Physics #Quantum and electron transport phenomena #Thermal properties of materials #cond-mat.mes-hall #msc:92-02
paper · pdf · doi:10.1021/nl102459t
published as Nano Lett., Article ASAP, October 4, 2010 · 5 figures
openalex publication_date 2010/10/04 · arxiv created 2010/10/05 · arxiv updated 2010/10/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two-channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low-temperature transport is similar to that seen in previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.