2010/05/25 by Shi‐Bo Cheng, Ke Zou, Fujio Okino +6 · 4 citations
Materials Science · #Graphene research and applications #Ga2O3 and related materials #2D Materials and Applications
paper · doi:10.1103/physrevb.81.205435
openalex publication_date 2010/05/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/29
We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G\ensuremathΩ at room temperature. Electron transport in graphene fluoride is well described by variable range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k\ensuremathΩ at room temperature. Our approach provides a pathway to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.