2010/04/05 by Shengqiang Zhou, Danilo Buerger, Danilo Bürger +10 · 1 citation
Chemistry · Materials Science · Physics and Astronomy · #Annealing (glass) #Chemistry #Condensed matter physics #Doping #Electrical resistivity and conductivity #Electronic and Structural Properties of Oxides #Ferromagnetism #Germanium #Hall effect #Hysteresis #Ion #Ion implantation #Magnetic field #Magnetic semiconductor #Magnetization #Manganese #Materials science #Metallurgy #Optoelectronics #Physics #Semiconductor #Semiconductor Quantum Structures and Devices #Silicon #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.81.165204
published as Phys. Rev. B 81, 165204 (2010) · 14 pages, 7 figures, to be published at Phys. Rev. B (2010)
arxiv created 2010/04/05 · openalex publication_date 2010/04/22 · arxiv updated 2010/04/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 1018 to over 1020 cm^\ensuremath-3. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism.