Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

1999/09/28 by T. Omiya, F. Matsukura, T. Dietl +6 · 5 citations
Materials Science · Mathematics · Physics and Astronomy · #Condensed matter physics #Field (mathematics) #Magnetic and transport properties of perovskites and related materials #Magnetic field #Materials science #Mathematics #Physics #Rare-earth and actinide compounds #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1016/s1386-9477(00)00099-0

PDF file, 8 pages, 4 figures

arxiv created 1999/09/28 · openalex publication_date 2000/05/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10²0 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV.

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