2002/02/07 by G. Bouzerar, T. P. Pareek
Materials Science · Physics and Astronomy · #Coherent potential approximation #Condensed matter physics #Decoupling (probability) #Electron #Electronic structure #Ferromagnetism #Impurity #Magnetic field #Magnetic semiconductor #Magnetization #Magnon #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Quantum mechanics #Random phase approximation #ZnO doping and properties #cond-mat.dis-nn #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.65.153203
5 figures included. to appear in Phys. Rev. B (brief report)
arxiv created 2002/02/07 · openalex publication_date 2002/03/28 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present a theory for carrier-induced ferromagnetism in diluted magnetic semi-conductor (DMS). Our approach treats on equal footing both quantum fluctuations within the random-phase approximation and disorder within the coherent potential approximation (CPA). This method allows for the calculation of Tc, magnetization, and magnon spectrum as a function of hole, impurity concentration, and temperature. It is shown that, sufficiently close to Tc and within our decoupling scheme (Tyablicov type), the CPA for the itinerant electron gas reduces to the virtual crystal approximation. This allows, in the low-impurity concentration and low density of carriers, to provide analytical expression for Tc. For illustration, we consider the case of Ga_1\ensuremath-cMncAs and compare our results with available experimental data.