2003/01/27 by R. Moriya, H. Munekata
Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Atmospheric temperature range #Electrical resistivity and conductivity #Hall effect #Impurity #Ionization #Magnetic properties of thin films #Magnetism #Range (aeronautics) #Substrate (aquarium) #Supercapacitor Materials and Fabrication #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1559426
8 pages, 4 figures, table
arxiv created 2003/01/27 · openalex publication_date 2003/04/03 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers grown at high (Ts=580 °C) and low (Ts=250 °C) substrate temperatures has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for a wide range of Mn concentrations (NMn=1017–1021 cm−3). Low-Ts samples are found to be classified into three different types: (a) a highly resistive, strongly compensated region at NMn⩽1018 cm−3, (b) a low-resistance, fully ionized region for NMn between 5×1018 and 1020 cm−3 in which impurity conduction dominates, and (c) a magnetic, low-resistance region for NMn⩾2×1020 cm−3 in which magnetism and carrier transport are strongly correlated. A quantitative assessment of the anomalous Hall effect at room temperature is also carried out.