2005/09/05 by N. Pinto, L. Morresi, M. Ficcadenti +8 · 3 citations
Materials Science · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.72.165203
published as Phys. Rev. B 72, 165203 (2005) · 16 pages, 6 figures. To be published in Phys. Rev. B
arxiv created 2005/09/05 · openalex publication_date 2005/10/12 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Electronic transport and magnetic properties of Ge1--xMnx∕Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulatorlike behavior in the whole temperature range and, below about 80\phantom\rule0.3em0exK, two distinct activation energies are observed. At a higher temperature value, TR, resistivity experiences a sudden reduction. The Hall coefficient shows a strong contribution from the anomalous Hall effect and, at TR, a sign inversion, from positive to negative, is recorded. The magnetic properties, inferred from magneto-optical Kerr effect, evidence a progressive decrease of the ferromagnetic long range order as the temperature is raised, with a Curie temperature TC not far from TR. The transport and magnetic results are qualitatively consistent with a percolation mechanism due to bound magnetic polarons in a GeMn diluted magnetic semiconductor, with localized holes [A. Kaminski and S. Das Sarma, Phys. Rev. B 68, 235210 (2003)].