Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix

2009/10/21 by Shengqiang Zhou, Artem Shalimov, Kay Potzger +6 · 1 citation
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #Heusler alloys: electronic and magnetic properties #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.3264076

published as Appl. Phys. Lett. 95, 192505 (2009) · 10 pages, 4 figures,. submitted to Appl. Phys. Lett

arxiv created 2009/10/21 · openalex publication_date 2009/11/09 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the interparticle interaction through the Mn-diluted Ge matrix.

Citations

• Spin-glass-like behavior of Ge:Mn

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• Hysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism

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