2009/06/30 by Eric Nordberg, E. P. Nordberg, G. A. Ten Eyck +20 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Charge density #Condensed matter physics #Conductance #Coulomb blockade #Materials science #Metal #Nanostructure #Nanotechnology #Optoelectronics #Oxide #Physics #Quantum and electron transport phenomena #Quantum dot #Semiconductor #Semiconductor materials and devices #Silicon #Stack (abstract data type) #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.80.115331
published as Phys. Rev. B 80, 115331 (2009) · 11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev. B
arxiv created 2009/09/11 · openalex publication_date 2009/09/29 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb-blockade behavior showing single-period conductance oscillations that are consistent with a lithographically defined quantum dot is exhibited in several MOS quantum dots with an open-lateral quantum-dot geometry. Decreases in mobility and increases in charge defect densities (i.e., interface traps and fixed-oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities and their role in gated Si quantum dots. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully qualified complementary metal-oxide semiconductor facility.