Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

2009/09/15 by M. Xiao, Mengyuan Xiao, Matthew House +3
Engineering · Physics and Astronomy · #Condensed matter physics #Electron #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Relaxation (psychology) #Semiconductor #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Silicon #Spectroscopy #Spin (aerodynamics) #Spin engineering #Spin polarization #Spinplasmonics #Spins #Zero field splitting #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.104.096801

11 pages, 4 figures

arxiv created 2009/09/15 · openalex publication_date 2010/03/02 · arxiv updated 2013/05/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T1, respectively.

Citations

• Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
• Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
• Electrical Control of Spin Relaxation in a Quantum Dot
• Rashba spin-orbit coupling and spin relaxation in silicon quantum wells
• Spins in few-electron quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot