2008/05/13 by Kirill I. Bolotin, K. I. Bolotin, K. J. Sikes +7
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Ballistic conduction #Carrier scattering #Charge (physics) #Charge carrier #Charge-carrier density #Condensed matter physics #Conductivity #Doping #Electrical resistivity and conductivity #Electron #Electron mobility #Graphene #Graphene research and applications #Materials science #Nanotechnology #Optics #Optoelectronics #Phonon #Physics #Quantum mechanics #Scattering #Semiconductor #Thermal properties of materials #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.101.096802
arxiv created 2008/05/13 · openalex publication_date 2008/08/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5<T<240 K. At T\ensuremath∼5 K transport is near-ballistic in a device of \ensuremath∼2 \ensuremathμm dimension and a mobility \ensuremath∼170 000 cm2/V s. At large carrier density, n>0.5\ifmmode×\else\texttimes\fi1011 cm^\ensuremath-2, the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T=240 K the mobility is \ensuremath∼120 000 cm2/V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <108 cm^\ensuremath-2.