Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

2008/02/29 by Kiyohiko Toyama, Takahisa NISHIOKA, Takahisa Nishioka +4 · 14 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Anisotropy #Condensed matter physics #Electron #Ferromagnetism #Hall effect #Hysteresis #Ising model #Magnetic field #Materials science #Physics #Plateau (mathematics) #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.101.016805

published in Physical Review Letters 101(1), 016805 (American Physical Society) · 4 pages, 4 figures

openalex publication_date 2008/07/02 · arxiv created 2008/07/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.

Citations

• Resistance Spikes and Domain Wall Loops in Ising Quantum Hall Ferromagnets
• Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well
• Spin polarization and metallic behavior in a silicon two-dimensional electron system

Cited by

• Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well
• Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II