2012/04/05 by I. L. Drichko, И. Л. Дричко, I. Yu. Smirnov +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Anisotropy #Condensed matter physics #Energy (signal processing) #Ferromagnetism #Field (mathematics) #Filling factor #Geometry #Heterojunction #Landau quantization #Magnetic field #Magnetoresistance #Physics #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor Quantum Structures and Devices #Tilt (camera) #cond-mat.mes-hall
paper · pdf · doi:10.1134/s1063776112080067
published in Journal of Experimental and Theoretical Physics 115(3), 480-484 (Pleiades Publishing) · 5 pages, 6 figures
arxiv created 2012/04/05 · openalex publication_date 2012/09/01 · arxiv updated 2015/06/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The magnetoresistance components ρ xx and ρ xy are measured in two p -Si/SiGe/Si quantum wells that have an anisotropic g -factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p = 2 × 10 11 cm −2 . This transition is due to the crossing of the 0↑ and 1↓ Landau levels. However, in another sample with p = 7.2 × 10 10 cm −2 , the 0↑ and 1↓ Landau levels coincide for angles θ = 0–70°. Only for θ > 70° do the levels start to diverge which, in turn, results in the energy gap opening.