2001/01/26 by W. Pan, H. L. Störmer, H. L. Stormer +4
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.64.121305
4 pages, 4 figures
arxiv created 2001/01/26 · openalex publication_date 2001/09/10 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at \ensuremathν=4, 6, and 8 becomes strongly anisotropic when two electrical subbands are occupied. At these filling factors the usual deep minima in the magnetoresistance occur for the current flowing perpendicular to the in-plane B field direction but develop into strong maxima for the current flowing parallel to the in-plane B field. The origin of this anisotropy is unknown but resembles the recently observed anisotropy at half-filled Landau levels.