Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well

2009/03/31 by Tohru Okamoto, T. Okamoto, Kohei Sasaki +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Coincidence #Condensed matter physics #Electrical resistivity and conductivity #Electron #Landau quantization #Magnetic field #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum oscillations #Semiconductor materials and devices #Shubnikov–de Haas effect #Superconductivity #Symmetry (geometry) #cond-mat.dis-nn #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.79.241302

published as Phys. Rev. B 79, 241302(R) (2009) · 4 pages, 4 figures

openalex publication_date 2009/06/02 · arxiv created 2009/06/03 · arxiv updated 2015/05/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We study magnetotransport in a high-mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau-level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.

Citations

• Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
• Resistance Spikes and Domain Wall Loops in Ising Quantum Hall Ferromagnets
• Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well
• Exact results for interacting electrons in high Landau levels
• Ground-State Phase Diagram of 2D Electrons in a High Landau Level: A Density-Matrix Renormalization Group Study
• Spontaneous Breakdown of Translational Symmetry in Quantum Hall Systems: Crystalline Order in High Landau Levels