Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well

2005/12/31 by Junya Matsunami, Mitsuaki Ooya, T. Okamoto +1 · 3 citations
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.97.066602

published as Physical Review Letters 97, 066602 (2006). · to be published in Phys. Rev. Lett

arxiv created 2006/07/07 · openalex publication_date 2006/08/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T1.

Citations

• Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
• Metal–insulator transition in two-dimensional electron systems
• Spintronics: Fundamentals and applications
• Metallic behavior and related phenomena in two dimensions

Cited by

• Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
• Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well
• Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells