2013/04/01 by Lijing Qiu, Akihiro Ikeda, Kazuhiro Noda +2 · 3 citations
Engineering · Materials Science · #3D IC and TSV technologies #Electronic Packaging and Soldering Technologies #Copper Interconnects and Reliability
paper · doi:10.7567/jjap.52.04cb10
Room-temperature Cu–Cu bonding was realized by applying ultrasonic vibration together with compression force to the bonding of a cone-shaped bump. The size of the bump was about 10 µm. The connection pitch was 20 µm. Mechanical characterization showed that the bonding strength increases with vibration amplitude and depends on the thickness of the counter electrode made of Cu. The thickness dependence of the bonding strength was found to be caused by an increase in the surface roughness of the counter electrode. It was shown that the bonding strength meets the requirement from application to products. Electrical characterization using a daisy-chain connection test demonstrated that more than 10,000 pins on a chip can be connected with a sufficiently low resistance.