GaN-on-Si Power Technology: Devices and Applications

2017/02/27 by Kevin J. Chen, Oliver D. Häberlen, Oliver Haberlen +6 · 33 citations
Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Silicon Carbide Semiconductor Technologies #Semiconductor materials and devices

paper · doi:10.1109/ted.2017.2657579

Abstract

In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

Cited by

• Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress
• Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
• GaN-based power devices: Physics, reliability, and perspectives
• Demonstration of TFTs 3D Monolithically Integrated on GaN HEMTs using Cascode Configuration with High Breakdown Voltage (>1900V)
• Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate
• Acoustic Phonon-Induced Dephasing in Gallium Nitride Defect-Based Quantum Emitters
• Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability
• The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures
• A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure. [europepmc]
• Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic. [europepmc]
• PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments. [europepmc]
• The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor. [europepmc]
• The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. [europepmc]
• The Evolution of Manufacturing Technology for GaN Electronic Devices. [europepmc]
• Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps. [europepmc]
• High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT. [europepmc]
• Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. [europepmc]
• Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric. [europepmc]
• Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices. [europepmc]
• Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs. [europepmc]
• The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application. [europepmc]
• High Selectivity, Low Damage ICP Etching of p -GaN over AlGaN for Normally-off p -GaN HEMTs Application. [europepmc]
• Evaluation on Temperature-Dependent Transient V T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. [europepmc]
• Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications. [europepmc]
• Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review. [europepmc]
• Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT. [europepmc]
• A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap. [europepmc]
• An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics. [europepmc]
• Vertical GaN MOSFET Power Devices. [europepmc]
• Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices. [europepmc]
• Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors. [europepmc]
• Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers. [europepmc]
• Phonon dispersion of buckled two-dimensional GaN. [europepmc]

Related

• Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
• GaN-based power devices: Physics, reliability, and perspectives
• High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs
• Superjunction Power Devices, History, Development, and Future Prospects
• Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization