Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

2022/10/13 by Xin Chao, Chengkang Tang, Chen Wang +9 · 1 citation
Materials Science · Mathematics · Physics and Astronomy · #Algorithm #Arithmetic #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Mathematics #Notation #Physics #State (computer science) #ZnO doping and properties

paper · doi:10.1109/ted.2022.3211163

openalex publication_date 2022/10/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29

Abstract

In this work, time-dependent threshold voltage (V_\text TH) instability of p-GaN gate high electron mobility transistors (HEMTs) under OFF-state drain stress is systematically investigated. An anomalousV_\text THshift behavior is observed with an initial negative shift followed by a kink and a positive shift upon prolonged stress time. Through bias- and temperature-dependent stress/recovery experiments, it has been found that the process of electron releasing by donor states at the p-GaN/AlGaN and AlGaN/GaN interface is the primary reason for negativeV_\text THshift in the initial stage. The hole deficiency in the p-GaN layer gradually dominates the change inV_\text THand finally leads to a positiveV_\text THshift. Moreover, a continual leakage path between the gate and drain terminal during the stress stage is further revealed which is mainly ascribed to the trap-assisted electron tunneling across the AlGaN layer. In addition, the effect of OFF-state drain stress on static ON-resistance (R_ON) is also studied, and it is found that the trapped electrons at the passivation/AlGaN interface and/or in the GaN buffer layer results in theR_ONdegradation.

Citations

• Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
• Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
• GaN-on-Si Power Technology: Devices and Applications

Cited by

• Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [europepmc]

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