2025/02/06 by Junjie Yang, Jingjing Yu, Jiawei Cui +9
Engineering · Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Silicon Carbide Semiconductor Technologies
paper · doi:10.1109/led.2025.3539353
openalex publication_date 2025/02/06 · openalex created_date 2025/02/07 · openalex updated_date 2026/07/29
This work investigates the charge balance design of the 1200-V E-mode lateral superjunction p-GaN gate HEMT (SJ-HEMT) on sapphire substrate. The charge balance is formed through the alternative p-/n-pillars; the p-pillars are thinned p-GaN stripes, and the n-pillars are 2DEG stripes. The charge balance design on the static and dynamic performance of the SJ-HEMT was investigated by tuning the width of p-/n-pillars. The SJ-HEMT with charge balance yields a BV of 2655 V and a high BV/L_\text GDratio of 1.56 MV/cm. Notably, the SJ-HEMT demonstrates effective suppression of trapping effects, which exhibits a strong correlation with the gap between two p-pillars. At charge balance design, the SJ-HEMT presents an excellent dynamicR_\text ON/staticR_\text ONratio of 1.28 underV_\text DSstress up to 1200 V. Our study also indicates a scaling of p-/n-pillars can further improve the dynamicR_\text ONperformance. This work underscores the merits of charge-balanced design for high-performance 1200-V E-mode GaN power transistors.