Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

2019/11/21 by Yongle Qi, Qi, Yongle, Suzhen Wu +1
Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces

paper · pdf · doi:10.48550/arxiv.1911.09317

openalex publication_date 2019/11/21 · openalex created_date 2019/12/05 · openalex updated_date 2026/07/28

Abstract

Characteristic electrical curves of GaN HEMT devices from Infineon and Transphorm are compared at different X-ray radiation dose. It is shown that the device with pGaN gate is more robust having a stable threshold voltage (Vth). The Vth of device with MIS gate shifts towards negative direction firstly and shifts to forward direction then. A qualitative analysis is performed in the paper. Such dynamic phenomenon is caused by releasing and trapping effects of radiation induced charges both in the dielectric layer and the interface of the device. It is summarized that pGaN gate based GaN HEMT is a promising solution for further space use of electric source

Citations

• GaN-on-Si Power Technology: Devices and Applications

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