2026/07/27 by Bai Ding, Weitao Ding, Rongxing Cao +7
paper · doi:10.1088/1402-4896/ae9144
Abstract In this paper, the influence mechanism of total ionizing dose (TID) effect on the single-event burnout (SEB) sensitivity of enhancement-mode AlGaN/GaN HEMTs was investigated by a combined method of experiment and simulation. Gamma-ray irradiation significantly affects the electrical characteristics of the device, with a 0.16 V decrease in threshold voltage and a substantial increase in leakage current at a dose of 900 krad(Si). Further single-event effect experiments showed that for the devices pre-irradiated with TID, the threshold voltage of SEB was reduced by 100V. Utilizing TCAD simulation, it was found that gamma-ray irradiation induces a large number of fixed positive charges and defect states in regions such as the device barrier layer and heterojunction interface, leading to the increase of internal electric field intensity, impact ionization rate, and local lattice temperature. These factors jointly reduce the voltage threshold of SEB and ultimately enhance the SEB susceptibility of the device.