Spin gap in the two-dimensional electron system ofGaAs∕AlxGa1−xAssingle heterojunctions in weak magnetic fields

2004/09/30 by V. S. Khrapai, A. A. Shashkin, E. L. Shangina +6 · 1 citation
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.72.035344

published as Phys. Rev. B 72, 035344 (2005) · as published

arxiv created 2005/07/13 · openalex publication_date 2005/07/27 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We study the interaction-enhanced spin gaps in the two-dimensional electron gas confined in GaAs∕AlGaAs single heterojunctions subjected to weak magnetic fields. The values are obtained from the chemical potential jumps measured by magnetocapacitance. The gap increase with parallel magnetic field indicates that the lowest-lying charged excitations are accompanied with a single spin flip at the odd-integer filling factor \ensuremathν=1 and \ensuremathν=3, in disagreement with the concept of skyrmions.

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