2005/01/05 by Yu. V. Dubrovskii, Dubrovskii, Yu. V., V. A. Volkov +13
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0501074
Revtex4, 6 pages, 5 Postscript figures, to be submitted to Physical Review B
arxiv created 2005/01/06 · arxiv updated 2009/12/01
Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T.