Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

2003/01/20 by V. S. Khrapai, A. A. Shashkin, V. T. Dolgopolov
Physics and Astronomy · #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.91.126404

published as Phys. Rev. Lett. 91, 126404 (2003)

arxiv created 2003/01/20 · arxiv updated 2009/11/30

Abstract

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g-factor that is close to its value in bulk silicon and does not depend on filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.

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