Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

2000/07/03 by S. V. Kravchenko, A. A. Shashkin, David A. Bloore +1
Physics and Astronomy · #cond-mat.str-el #cond-mat.mes-hall

paper · pdf · doi:10.1016/s0038-1098(00)00361-6

published as Solid State Commun. 116, 495 (2000) · 4 pages, postscript figures included

arxiv created 2000/07/03 · arxiv updated 2009/11/30

Abstract

We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.

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