Does m^*g^* diverge at a finite electron density in silicon inversion layers?

2002/09/04 by M. P. Sarachik, Sarachik, M. P., S. A. Vitkalov +1
Physics and Astronomy · #FOS: Physical sciences #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/0209113

5 pages, 5 figures; conference proceedings: "Quantum Transport and Quantum Coherence" -- Localisation 2002 Sophia University, Tokyo, August 16-19, 2002, to be published in a supplement of the Journal of Physical Society of Japan

arxiv created 2002/09/04 · arxiv updated 2009/11/30

Abstract

For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density n₀. Analysis of these magnetotransport experiments yields a product g^*m^* that diverges at this density (here g^* is the interaction-enhanced Landé g-factor and m^* is the effective mass). This claim has been disputed based on direct determinations of the g^*m^* obtained from Shubnikov-de Haas measurements. We briefly review these experiments, and possible sources of the discrepancies.

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• Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers