Negative Magnetoresistance in Silicon (100) MOS Inversion Layers

1980/02/01 by Yoichi Kawaguchi, Shinji Kawaji · 2 citations
Physics and Astronomy · Engineering · #Quantum and electron transport phenomena #Advancements in Semiconductor Devices and Circuit Design #Semiconductor materials and devices

paper · doi:10.1143/jpsj.48.699

Abstract

The observation of the negative magnetoresistance in silicon (100) n-channel inversion layers is well reproduced by the recent theory for the random potential scattering in two dimension by Hikami, Larkin and Nagaoka. The parameter α is 0.30±0.05 at an areal concentration of electrons of 5.0×10 12 cm -2 .

Cited by

• Magnetoresistance in Two-Dimensional Disordered Systems: Effects of Zeeman Splitting and Spin-Orbit Scattering
• Mesoscopic scattering dynamics under generic uniform SU(2) gauge fields: Spin-momentum relaxation and coherent backscattering

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