Strong enhancement of the valley splitting in a two-dimensional electron system in silicon

2002/02/28 by V. S. Khrapai, A. A. Shashkin, V. T. Dolgopolov · 1 citation
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat

paper · pdf · doi:10.1103/physrevb.67.113305

published as Phys. Rev. B 67, 113305 (2003) · As published. 4 pages, 3 figures

arxiv created 2002/12/23 · openalex publication_date 2003/03/17 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the valley gap at \ensuremathν=1 and \ensuremathν=3. The data yield a valley gap that is strongly enhanced compared to the single-particle value and increases linearly with magnetic field. This result has not been explained by existing theories.

Cited by

• Wide Electrical Tunability of the Valley Splitting in a Doubly gated Silicon-on-Insulator Quantum Well

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