Direct Measurements of Fractional Quantum Hall Effect Gaps

2007/02/16 by V. S. Khrapai, A. A. Shashkin, M. G. Trokina +7 · 1 citation
Physics and Astronomy · #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.99.086802

published as Phys. Rev. Lett. 99, 086802 (2007)

arxiv created 2007/02/16 · openalex publication_date 2007/08/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases linearly with the magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.

Citations

• Strong enhancement of the valley splitting in a two-dimensional electron system in silicon
• Spin gap in the two-dimensional electron system ofGaAs∕AlxGa1−xAssingle heterojunctions in weak magnetic fields
• Crossover and Coexistence of Quasiparticle Excitations in the Fractional Quantum Hall Regime atν≤1/3

Cited by

• Filling Factor Dependence of the Fractional Quantum Hall Effect Gap